Solder material and method for die attachment

ABSTRACT

A solder material comprising a solder alloy and a thermal conductivity modifying component. The solder material has a bulk thermal conductivity of between about 75 and about 150 W/m-K and is usable in enhancing the thermal conductivity of the solder, allowing for optimal heat transfer and reliability in electronic packaging applications.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.16/612,883, filed Nov. 12, 2019, which is the U.S. national stageapplication of PCT/US2018/032325, filed May 11, 2018, which claims thebenefit of Provisional Application No. 62/505,463, filed May 12, 2017,the entire disclosures of which are incorporated herein by reference.

FIELD OF THE INVENTION

The present invention relates generally to a solder material for use inelectronic packaging containing a thermal conductivity modifyingcomponent to enhance heat dissipation of the electronic device andenhance its reliability.

BACKGROUND OF THE INVENTION

In order for a semiconductor device to be used in an electronic product,it must be electrically, mechanically and, in some cases, thermallyinterconnected to a semiconductor package. This mechanicalinterconnection can be achieved using an adhesive material (e.g. apolymer material) in paste or film form. Electrical connection can beachieved by attaching thin gold wires or tabs between electrical outputsof the semiconductor device and inputs of the semiconductor package.When thermal conduction is required, such as for power devices, oneconventional strategy involves replacing the polymer mechanical adhesivewith a solder that is disposed between the semiconductor device andsemiconductor package at the time of assembly.

Solder paste is the most recognized form of solder used in electronicsassembly. A surface mount application typically depends on solder pasteto attach the components to the circuit board. However, solder paste maynot be the only solution. This is especially true when working withthrough-hole components or very large devices that require more solderthan can be supplied by printed solder paste. Quite often a printedcircuit board involves mixed technology that requires more than one formof solder. Thus, solder paste may be used for surface mount componentsand solder preforms may be used to attach the leads on through-holecomponents.

Solder preforms are formed shapes of solder that are designed to beextremely uniform, with each preform consistently delivering the samevolume of solder to the joint. Solder preforms can also be formed into avariety of shapes and sizes to fit specific requirements, includingwashers, discs, squares, rectangles, and frames, with sizes ranging fromextremely small to quite large, depending on the solder volume needed tocomplete the joint. These shapes can also be connected with narrowstrands of solder for use when multiple preforms are being applied in aspecific pattern. The strands are designed to break apart at the momentof reflow and wick back to the solder mass, allowing for faster and moreaccurate placement.

Solder preforms can also be used in combination with solder paste tofortify a solder joint. For example, it may be desirable to use apreform if the solder paste does not provide enough solder volume tomeet the joint's strength and coverage requirements.

There is also a continuous pressure in the industry to reduce cost,increase throughput and yield, and increase the performance andreliability of packaged semiconductor devices.

Die-attach materials, which are typically solders or filled polymericmaterials, are used to connect semiconductor die to lead-frames, otherdie, heat sinks and the like. The fillers may be electrically conductiveor non-conductive depending on the requirements of the connection.Previously, die-attach materials primarily provided a mechanical bond.However, as semiconductor devices have advanced to more complex andpowerful uses, they have also become more heat-generating duringoperation, and conduction of waste heat has become a desirable featureof the die-attach material.

For high power applications, solder is the die-attach material of choicedue to its high thermal conduction. However, solders have somedetrimental characteristics as well. One major drawback to solders isthat solders have a tendency to form voids in the bond line, both duringdie bonding and during subsequent thermal excursions. These voids createhot spots of poor thermal conductivity under the die and increase therequirement for post-bonding inspection to ensure acceptable results.

High temperature solder alloys are extensively used in die attachmentapplications, power semiconductor and optical device packaging,flip-chip packaging, heat-sink joining, and other applications wheredissipation of heat generated during operation is important. Soldermaterials enable bonding of heat generating electronic devices to asubstrate to create mechanical and electrical connections.

Current industry standard solders for these applications typicallyrequire high-lead solders (e.g., 90-95 wt. % Pb) and Au-based eutecticsolder alloys (e.g., 80Au20Sn solder). The die attach process generallyinvolves connecting a silicon die or chip to a lead frame or othersubstrate using adhesive bonding or solder joining. Soldering is apreferred method for attaching a die to a lead frame, especially forpower devices due to the higher current carrying capability and betterthermal conductivity of a solder alloy as compared with a polymericadhesive, which is beneficial in dissipating the heat generated by thedevice.

Solders used for die attach typically have a liquidus temperature of atleast 280° C. to allow for subsequent mounting of packaged devices onprinted circuit boards with eutectic SnPb or lead-free SnAgCu (SAC)solders by reflow soldering at a temperature of 200 to 250° C.

The most widely used solders for die attachment include high-Pb alloys,e.g., 95Pb5Sn, 88Pb10Sn2Ag, and 92.5Pb5Sn2.5Ag. However, the use of leadis banned in many applications due to its toxicity. Although the high-Pbsolder alloys for the first level packaging applications are exemptedfrom the current Restriction of Hazardous Substances Directive (RoHS)regulations because of the lack of a reliable replacement for them, theconversion to lead-free materials in these areas will eventually beimplemented and is highly desirable. Lead-free eutectic Au—Sn (280° C.),Au—Si (363° C.), and Au—Ge (356° C.) alloys can be used as die attachsolders, but their cost is prohibitive. Although other high temperaturelead-free solders in the Sn—Sb, Bi—Ag, Zn—Sn, and Zn—Al systems are alsoknown to be candidates, each has its own drawbacks. For example, thesolidus temperatures of Sn—Sb and Zn—Sn alloys are generally too low,Zn—Al alloys are highly corrosive and easily oxidized, and Bi—Ag alloyshave brittleness and issues with low thermal/electrical conductivity.

Thus, it can be seen that many of the presently used solder materialsare facing the limits of their capabilities, thus compromising devicereliability and limiting its service life. There remains a need in theart for an improved solder material that is capable of improving devicereliability, especially for high power electronic components.

With the miniaturization of electronic equipment and need to create highpower electronic components, the requirement for heat dissipation awayfrom heat generating semiconductor devices has become very critical.

Solders used in die attach and other electrical interconnects performmultiple functions such as providing mechanical strength to join theparts together, providing a path for electrical current, or providing athermal interface as a route for heat generated in the device todissipate to a heat sink. Physical properties of the solder materialsuch as thermal conductivity, electrical conductivity, tensile strength,shear strength, creep, and its capacity to form a good interface withdevices and circuit boards are important factors in determining itsoverall performance in the real life application. These properties alsoneed to be stable over time under typical operating conditions.

Electronic devices, especially high power devices such as LED and highpower amplifiers and switches etc., generate a lot of heat which need tobe dissipated. During operation of such devices, the thermal andelectrical interface material sees high temperatures for long periods oftime. During high temperature operation, the interconnect material alsofaces high mechanical stress due to coefficient of thermal expansion(CTE) mismatch between the device, substrate and interconnect materials.Therefore, for long life of the device under operation, the interconnectmaterials as well as the interfaces should have stable mechanical,thermal and electrical properties under these conditions.

Thermal energy in metals and alloys is primarily transported byelectrons. In general, metals and alloys show a decrease in thermalconductivity with increasing temperature. This is usually the result ofa combination of several factors such as electron-electron scattering,electron-atom scattering, and electron scattering from the grainboundaries within the alloys and at the interfaces. Changes inconductivity are not desirable. The electrical resistivity of metals andalloys can also change with an increase in temperature. Resistivitychanges in the solder alloys are also undesirable.

Suitable interconnect materials and processing techniques thereforeremain a major challenge in the design of reliable high-temperaturepackages for electronic devices and systems. Wide temperature swings andhigh temperatures substantially increase thermo-mechanical stressesimparted on a device. At elevated temperatures, the solder strengthdecreases while deformation or creep accelerates, resulting in increaseddeformation during each load cycle and a reduction in fatigue life.Established solder technologies have failed to overcome such problemsand to provide for reliable high temperature operation.

U.S. Pat. No. 8,348,139 to Liu et al., the subject matter of which isherein incorporated by reference in its entirety, describes a laminatecomposite preform foil for high-temperature lead-free solderingapplications.

U.S. Pat. No. 8,034,662 to Tozelbaev et al., the subject matter of whichis herein incorporated by reference in its entirety, describes asemiconductor chip thermal interface material method that includesplacing a thermal interface material layer containing a supportstructure on the first semiconductor chip. However, this reference islimited to the use of a mesh which does not allow for the free movementto the solder joint periphery of gas formed during the interaction ofthe metal oxides and flux during reflow.

Thus, there remains a need in the art for a lead-free solder alloy thatis capable of heating dissipation away from heat generatingsemiconductor devices, that exhibits sufficiently high thermalconductivity and that overcomes the deficiencies of the prior art.

SUMMARY OF THE INVENTION

It is an object of the present invention to provide a solder alloy thatis capable of heat dissipation away from heat generating semiconductordevices.

It is another object of the present invention to provide a solderpreform that exhibits sufficient thermal conductivity.

It is still another object of the present invention to provide a solderpreform that contains a thermal conductivity modifying component.

To that end, in one embodiment, the present invention relates generallyto a solder material comprising:

-   -   A) a solder alloy, and    -   B) a thermal conductivity modifying component,    -   wherein the solder material has a bulk thermal conductivity of        between about 75 and about 150 W/m-K.

BRIEF DESCRIPTION OF THE DRAWINGS

For a fuller understanding of the invention, reference is made to thefollowing description taken in connection with the accompanying figures,in which:

FIG. 1 depicts a schematic of the solder material as described hereinwith enhanced thermal conductivity. view of the solder material inaccordance with one embodiment of the present invention in which copperwire is embedded within the solder alloy and a view of a solder materialin accordance with one embodiment of the present invention in whichcopper wire is embedded in the solder alloy and also containing acladded core layer.

FIG. 2 depicts an optical image of the solder material preform inaccordance with one aspect of the present invention.

FIG. 3 depicts an X-ray image of the preform of FIG. 2 , showing theembedded wire.

FIG. 4 depicts an optical image of a preform in accordance with thepresent invention, showing the embedded wire.

FIGS. 5A and 5B depict SEM images of a silicon die attached to asubstrate using the solder material of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The present invention relates generally to a solder material for use inelectronic packaging, the solder material comprising a solder alloy anda thermal conductivity modifying component. Thus, in one embodiment, thepresent invention relates generally to a solder preform containing athermal conductivity modifying component.

As used herein, “a,” “an,” and “the” refer to both singular and pluralreferents unless the context clearly dictates otherwise.

As used herein, the term “about” refers to a measurable value such as aparameter, an amount, a temporal duration, and the like and is meant toinclude variations of +/−15% or less, preferably variations of +/−10% orless, more preferably variations of +/−5% or less, even more preferablyvariations of +/−1% or less, and still more preferably variations of+/−0.1% or less of and from the particularly recited value, in so far assuch variations are appropriate to perform in the invention describedherein. Furthermore, it is also to be understood that the value to whichthe modifier “about” refers is itself specifically disclosed herein.

As used herein, spatially relative terms, such as “beneath”, “below”,“lower”, “above”, “upper”, “front”, “back”, and the like, are used forease of description to describe one element or feature's relationship toanother element(s) or feature(s). It is further understood that theterms “front” and “back” are not intended to be limiting and areintended to be interchangeable where appropriate.

As used herein, the terms “comprises” and/or “comprising,” specify thepresence of stated features, integers, steps, operations, elements,and/or components, but do not preclude the presence or addition of oneor more other features, integers, steps, operations, elements,components, and/or groups thereof.

As described herein, the present invention is directed to materials,processes and designs that can be used to improve the performance of asemiconductor to substrate interface, thereby increasing the flow ofheat away from the interface and heat generating electronic device.

In one embodiment, the present invention relates generally to a soldermaterial comprising:

-   -   A) a solder alloy, and    -   B) a thermal conductivity modifying component,    -   wherein the lead-free solder material has a bulk thermal        conductivity of between about 75 and about 150 W/m-K.

In one preferred embodiment, the solder material is in the form of asolder preform.

As described herein, in one embodiment, the solder material has a highthermal conductivity, the thermal conductivity being higher thantraditional solders used in electronic packaging applications. In oneembodiment, the thermal conductivity of the composite solder material isleast about 5% greater than traditional solders, or at least about 10%greater than traditional solders, up to about 50% greater thantraditional solders, and even higher depending on the thermalconductivity of the solder alloy and the thermal conductivity of thethermal conductivity modifying component.

The solder material provides a metallurgical bond between the substrateand the component in electronic packaging applications. As describedherein, it is critical for the composite solder material to have thermalconductivity sufficient to provide connection without creating anexcessive thermal barrier.

In one embodiment, the solder alloy of the solder material comprises aconventional soldering material that requires adjustment of thermalconductivity, and the present invention can be used with many commonsolder alloys to enhance the thermal conductivity and mechanicalstrength of the solder material beyond the capabilities of the solderitself, including the common die attach solders such as high lead, SnAg,SAC, indium and indium alloys, and SnPb, by way of example and notlimitation. In a broad sense, the present invention can be used with anysolder alloy in which it is desirable to enhance the thermalconductivity and mechanical strength of the system. Thus, this solderalloy may comprise one or more of tin, copper, silver, bismuth,antimony, indium, gold-tin, lead, germanium, and nickel, by way ofexample and not limitation. In one embodiment, the solder alloy maycomprise a solder alloy as described in U.S. Pat. Pub. No. 2018/0102464or WO2017/192517, both to de Avila Ribas et al., the subject matter ofeach of which is herein incorporated by reference in its entirety.

What is important is that the solder alloy is capable of being optimizedfor heat transfer and reliability with the addition of the thermalconductivity enhancement component described herein.

Table 1 lists some examples of some common solder alloys, many of whichare used in die attach and packaged device attach applications. A quickexamination of the thermal conductivity values illustrates that indiumhas one of the highest values at 80 W/c-K. However, indium has arelatively low melt temperature of 156° C., which limits its use in veryhigh power oriented die attach and packaged device attach applications.

TABLE 1 Examples of suitable solder alloys Electrical Melting TensileThermal Resistivity Range Density CTE Strength Modulus ConductivityμOHM- Solder Alloy ° C. g/cm³ ppm/° C. Mpa Gpa W/m-° K. cm 88Au/12Ge 356E 14.7 13 185 69 44 na 92.5Pb/2.5Ag/5In 300   11.02 25 31.4 na 25 naHigh 92.5Pb/2.5Ag/5Sn 287-296 11.02 29 29 na 25-27 na Lead 88Pb/10Sn/2Ag268-299 10.77 29 22.5 na 27 8.5 Solders 80Au/20Sn 280 E 14.5 16 276 5957 16 96.5Sn/3.5Ag 221 E 7.36 30 38 50 61 12.5 SnAg and 96.5Sn/3Ag/.5Cu217-228 7.4 22 40 30 60 14.5 SAC 40In/60Pb 195-225 9.31 26 34.5 7.5 1933 63Sn/37Pb 183 E 8.4 25 32 40 50 na SnPb 62Sn/36Pb/2Ag 179 E 8.41 2746 na 31 14.6 100% In 156.7 7.31 29 2.5 1.4 80 8.8 Indium 80In/15Pb/5Ag148-149 7.85 26 17.5 12.8 43 16 97In/3Ag 146 E 7.38 22 5.5 2 73 7.5Indium alloy 58Bi/42Sn 138 E 8.76 14 55 42 19 35 52In/48Sn 118 E 7.3 2411.9 21.7 34 15 36Sn/36Pb/28Bi 100 E 9.34 20 40.2 24 na na

From Table 1, it can also be seen that typical thermal conductivityvalues can be as low as 19 W/m-K. These solder alloys are all capable ofproviding reliable connection with thermal resistance of the joint beinglow enough to ensure good reliability of many traditional electronicdevices. However, their low thermal conductivity makes them unsuitablefor use in high power electronic packaging applications.

The bulk properties and interface properties of the solder materialdescribed in the present invention are optimal for heat transfer andreliability. To increase the heat flow through the solder alloy, thesolder material of the present invention includes a thermal conductivityenhancement component. This thermal conductivity enhancement componentpreferably has a thermal conductivity of at least about 100 W/m-K, morepreferably at least about 200 W/m-K, even more preferably at least about300 W/m-K, and even more preferably at least about 400 W/m-K. Theinventors of the present invention have found that the choice ofmaterials has a profound effect on the formation of gas during reflowand on the mechanical strength of the joint. For example, bare copperwill produce more gas than tin plated copper. Gold is also not a desiredmaterial, since it will dissolve into the solder system and embrittlethe solder joint, resulting in premature failure in use, especially inpower cycling oriented applications. Likewise, aluminum without platingwill not wet to solder, resulting in no contribution of the mesh to thestructural strength of the solder system. However, aluminum, if platedwith nickel and tin, it will wet and form an intermetallic with solder,enhancing the solder system mechanical strength. In contrast, if thewire metal does not wet and form an intermetallic with the solder, thesystem will be inferior in mechanical strength to the solder without themetal wires.

In a preferred embodiment, the thermal conductivity enhancementcomponent comprises embedded wires because it has been found that theembedded wires increase the bulk thermal conductivity of the solder andprovide a path for enhance lateral heat dissipation as well. This isparticularly important for eliminating hot spots on the devices withnon-uniform heat generation. The wires are also beneficial to controlthe thickness and uniformity of the solder joint.

Thus, in a preferred embodiment, the thermal conductivity enhancementcomponent consists of wires and the wires are selected from the groupconsisting of silver, tin over copper, tin over nickel over aluminum,palladium, and platinum. In addition bare copper, bare aluminum and goldare not suitable for use in the present invention for the reasons setforth above.

The amount of thermal conductivity enhancement component in the solderdepends on the particular application and thus the desired bulk thermalconductivity of the solder material. The amount of thermal conductivityenhancement component will also depend on the particular composition ofthe solder alloy and the type of thermal conductivity enhancementcomponent chosen.

For example, in one preferred embodiment, the solder material is in theform of a preform, the preform comprising about 30 wt. % to about 95 wt.% solder alloy and about 70 wt. % to about 5 wt. % thermal conductivityenhancement component, more preferably, about 40 to about 90 wt. %solder alloy and about 60 to about 10 wt. % thermal conductivityenhancement component. The desired amount of thermal conductivityenhancement component is achieved by embedding one or more wires intothe solder material. As describe above, the bulk thermal conductivity ofthe solder material is preferably within the range of about 75 to about150 W/m-K, more preferably between about 90 and about 110 W/m-K.

The thermal conductivity enhancement component is preferablyincorporated into the solder in the form of a wire as shown in FIG. 1 .

There are several major enhancements of the present invention over thesystem described in U.S. Pat. No. 8,034,662. Firstly as discussed above,the thermal conductivity enhancement component of the present inventionis in the form of wires. In contrast, U.S. Pat. No. 8,034,662 uses amesh that is embedded in the solder to set a minimum solder thickness(bondline) and restrict solder movement during melting/reflow. Byrestricting the movement of the solder during reflow, the metallizationof the substrate and die will form a system that will restrict thesolder. As long as the bondline thickness is controlled, the solder willwet and adhere to the metallized surfaces and stay in the desiredlocation.

However, the use of the mesh embedded support structure is not desirablein the present invention because the use of the mech would result in asolder joint that would be mechanically inferior to one based on wires.First, the mesh structure does not allow for the free movement to thesolder joint periphery of gas formed during the interaction of the metaloxides and the flux during reflow. By using wires as in the presentinvention, there is one direction whereby the gases formed during reflowcan escape the solder joint, thus resulting in less voiding in thejoint.

In the present invention, in the case of rectangular solder joints, thewires are oriented parallel to the shorter dimension, to create ashorter path for gases to escape. This is important because if gas ispresent during solder solidification, voids in the solder joint willresult, compromising the mechanical integrity of the joint, reduce theeffective thermal conductivity, and reduce the strength of the solderattachment. A shear test of a highly voided solder joints used for dieattach results in lower shear force needed to separate the die from thesolder. If the voids are positioned under a die hot spot, it can resultin a premature failure of the die due to that hot spot, which is whymany industry specification regarding voiding state total voids limit,and single largest void limits as well.

The wires of the present invention can be used in parallel and theparallel wires can be packed closer together. This results in a higherpercentage of high thermal conductivity material being embedded in thesolder system, as compared with a mesh or small posts illustrated inU.S. Pat. No. 8,034,662.

Finally, as discussed above, it has been found that the choice ofmaterial for the thermal conductivity enhancement component is critical.In contrast, U.S. Pat. No. 8,034,662 makes no distinction as to the typeof mesh metal materials, and exemplary materials that are recited asbeing suitable include nickel, gold, platinum, silver, palladium,copper, aluminum, combinations of these, and the like.

FIG. 2 depicts an optical image of the solder material preform inaccordance with one aspect of the present invention. In addition, FIG. 3depicts an X-ray image of the preform of FIG. 2 , showing the embeddedwire. FIG. 4 depicts an optical image of a preform in accordance withthe present invention, showing the embedded wire.

The high thermal conductivity solder materials described herein may bemanufactured and applied to the substrate by any applicable method. Forexample, the wires may be incorporated into the solder alloy by rollingor casting. Other methods would also be known to those skilled in theart and applicable to the present invention.

To ensure good processability, the wires can be precoated with a solderalloy by electroplating, sputtering or other known techniques. Thissolder alloy is preferably the same solder alloy as the base solderalloy to ensure that there are not any issues with compatibility.

The diameter of the wire can vary between about 5 to about 200 microns,more preferably, between about 25 to about 150 microns, and even morepreferably between about 50 to about 125 microns. The resulting solderjoint is of about the same thickness as is typical for many electronicapplications.

The solder joint can be created by applying a solder paste and/or asolder preform to the substrate. During reflow process, the solder meltsand creates the joint between the substrate and the component. FIGS. 5Aand 5B depict SEM images of a silicon die attached to a substrate usingthe solder material of the present invention.

The solder material described herein is usable in all known assemblyprocesses, including, but not limited to reflow and vacuum ovens.

The invention will now be discussed in relation to the followingnon-limiting examples.

Example 1

This example illustrates the calculation of the resultant thermalconductivity change of a copper wire embedded preform as compare with asolder only preform. In this example, three copper wires of μm diameterwere embedded in a solder preform of dimensions 1000×1000×200 μm.

Volume of system: 1000 μm×1000 μm×200 μm=200×10⁶ μm³

Volume of copper: 3×Πr²h=3×Π(50 μm)²×1000 μm=23.5×10⁶ μm³

Volume of solder: (200−23.5)×10⁶ μm³

Thermal conductivity of copper (Cu_(TC)): 400 W/m-K

Thermal conductivity of solder (Solder_(TC)): 50 W/m-K

(Volume of Cu)/total volume×Cu_(TC)+(Volume of solder)/totalvolume×Solder_(TC)=Total (Bulk) Thermal conductivity=91 W/m-K.

Example 2

Example 2 demonstrates the enhancement of the thermal conductivity of atypical higher melt temperature solder, such as SnAg3.5 solder with athermal conductivity enhancement component comprising silver wires.Table 2 illustrates that by adding 5 silver wires to the solder, theresultant thermal conductivity of the system is increased to 88.1 W/m-K,which exceeds the value of indium. In addition, this system has amelting temperature of 221° C., which is capable of supporting a maximumdie operating temperature of 175° C. In contrast, an indium alloy canonly support a die operating temperature of about 110° C.

Replacing the silver wires with tin plated copper wires would result ina slightly smaller overall thermal conductivity value, but still resultin enhanced thermal conductivity as with a SnAg3.5 solder alloy withoutthermal enhancement.

TABLE 2 Enhancement of thermal conductivity of SnAg3.5 alloy with silverwires Thermal Length Width Thickness Conductivity Contribution Quantitymm mm mm Volume % W/m-K W/m-K Total 5 5 0.1 2.50 System Length DiameterEmbedded 5 5 0.1 0.20 7.9% 406 31.9 Ag Wires Solder 2.30 92.1% 61 56.2SnAg3.5 88.1

Thus it can be seen that the use of a thermal conductivity enhancementcomponent in a solder alloy material enhances the thermal conductivityof the system and allows for optimal heat transfer and reliability.

Finally, it should also be understood that the following claims areintended to cover all of the generic and specific features of theinvention described herein and all statements of the scope of theinvention that as a matter of language might fall there between.

What is claimed is:
 1. A solder material comprising: a solder, and athermal conductivity modifying component, the thermal conductivitymodifying component being in the form of a wire, wherein: the soldermaterial has a bulk thermal conductivity of between about 75 and about150 W/m-K, and the solder material is in the form of a solder preform.2. The solder material according to claim 1, wherein the soldercomprises tin.
 3. The solder material according to claim 1, wherein thesolder comprises a solder alloy selected from the group consisting ofhigh lead alloys, SnAg alloys, SnAgCu alloys, SnPb alloys, andcombinations thereof.
 4. The solder material according to claim 1,wherein the thermal conductivity modifying component is selected fromthe group consisting of silver, tin plated copper, tin over nickel overaluminum, palladium, and platinum.
 5. The solder material according toclaim 4, wherein the thermal conductivity modifying component comprisestin plated copper.
 6. The solder material according to claim 1, whereinthe solder comprises tin and the thermal conductivity modifyingcomponent comprises tin plated copper.
 7. The solder material accordingto claim 1, wherein the solder material comprises between about 30 wt. %to about 95 wt. % of the solder and about 70 wt. % to about 5 wt. % ofthe thermal conductivity modifying component.
 8. The solder materialaccording to claim 7, wherein the solder material comprises betweenabout 40 wt. % to about 90 wt. % of the solder and about 60 wt. % toabout 10 wt. % of the thermal conductivity modifying component.
 9. Thesolder material according to claim 1, wherein the wire comprises aplurality of wires that are used in parallel and the parallel wires arepacked close together.
 10. The solder material according to claim 1,wherein the wire is embedded in the solder.
 11. The solder materialaccording to claim 1, wherein the solder has a thermal conductivity ofbetween about 20 and about 70 W/m-K.
 12. The solder material accordingto claim 1, wherein the solder has a thermal conductivity of betweenabout 19 and about 80 W/m-K.
 13. The solder material according to claim1, wherein the thermal conductivity modifying component has a thermalconductivity of at least 100 W/m-K.
 14. The solder material according toclaim 13, wherein the thermal conductivity modifying component has athermal conductivity of at least 200 W/m-K.
 15. The solder materialaccording to claim 14, wherein the thermal conductivity modifyingcomponent has a thermal conductivity of at least 300 W/m-K.
 16. Thesolder material according to claim 15, wherein the thermal conductivitymodifying component has a thermal conductivity of at least 400 W/m-K.17. The solder material according to claim 1, wherein the soldermaterial has a bulk thermal conductivity of between about 80 and about110 W/m-K.
 18. The solder material according to claim 1, wherein thediameter of the wire is greater than 5 microns, greater than 25 microns,or greater than 50 microns.
 19. A solder joint comprising the soldermaterial of claim
 1. 20. The solder joint according to claim 19, whereinthe solder joint is rectangular and the wire is oriented parallel to ashorter dimension of the rectangular solder joint, wherein the wirescreate a shorter path for gases to escape.
 21. A method of making asolder joint between a substrate and a component, the method comprising:applying the solder material of claim 1 to a substrate; disposing acomponent on the solder material; and reflowing the solder material tocreate the solder joint between the substrate and the component.
 22. Themethod of claim 21, wherein reflowing the solder material is carried outin a vacuum oven.